packages/chip/research/npu_accelerator_2026/00_index.md
Date: 2026-05-19
This packet is the second pass of NPU / AI accelerator research for the Eliza
E1 chip. The earlier packet under
packages/chip/research/ai_accelerator_sota/ is preserved as the TPU /
rack-scale / sub-2 nm reference. This packet extends scope to the mobile NPU
microarchitecture and on-device LLM serving design space that drives the
2028 phone-class NPU targets in
docs/spec-db/npu-2028-target.yaml and the phase gates in
docs/spec-db/npu-2028-roadmap.yaml.
01_sources/source_inventory.yaml — provenance for >=60 distinct sources
across the 12 scope areas.02_analysis/mobile_npu_landscape.md — 2024-2026 mobile NPU competitive
analysis vs. E1 2028 targets.02_analysis/open_accelerator_rtl.md — usable open-source NPU/GPU/tensor
RTL keyed to E1 integration paths.02_analysis/quantization_int4_int2_fp8.md — low-precision algorithm and
hardware co-design evidence and recommended formats.02_analysis/sparsity_and_attention.md — N:M sparsity, attention
accelerators, KV-cache management.02_analysis/cim_and_near_memory.md — CIM/PIM landscape and applicability
to a phone NPU.02_analysis/dataflow_and_scheduling.md — dataflow taxonomies, tiling,
compiler/runtime hardware seam.03_implementation/npu_e1_recommendations.md — ranked recommendations
(High/Med/Low confidence) tied to E1 docs and phase gates.This packet is research only. It cites public papers, vendor briefs, open
project pages, and standards. None of the sources prove E1 silicon, power, or
benchmark behavior. E1 phase gates remain governed by
docs/spec-db/npu-2028-roadmap.yaml and the evidence manifests under
docs/benchmarks/capabilities/. Vendor TOPS, perf/W, and process claims are
recorded as marketing or whitepaper data unless backed by an ISSCC, HotChips,
or peer-reviewed paper.
01_sources/source_inventory.yaml and the analysis file that
links them to a specific phase gate.03_implementation/npu_e1_recommendations.md and must
pass the existing packages/chip validation gates before any RTL or spec
change is made.